3 TUD papers abstract are now available:
- Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes (collaboration Technische Universität Darmstadt and Universitat Autònoma de Barcelona)
- Heavy Ion Radiation Effects on Hafnium Oxide based Resistive Random Access Memory
- Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory