Discover the 3 last papers published by TU-Darmstadt within WAKeMeUP!

 - Role of Oxygen Defects in Conductive-Filament Formation in Y2O3-Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

E. Piros, M. Lonsky, S. Petzold, A. Zintler, S.U. Sharath, T. Vogel, N. Kaiser, R. Eilhardt, L. Molina-Luna, C. Wenger, J. Müller, and L. Alff

Phys. Rev. Applied 14, 034029 (2020)

doi: 10.1103/PhysRevApplied.14.034029

- Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

S. Petzold, E. Piros, R. Eilhardt, A. Zintler, T. Vogel, N. Kaiser, A. Radetinac, P. Komissinskiy, E. Jalaguier, E. Nolot, C. Charpin‐Nicolle, C. Wenger, L. Molina‐Luna, E. Miranda, L. Alff

Adv. Electron. Mater., Early View, 2000439 (2020)

- Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

E. Piros, S. Petzold, A. Zintler, N. Kaiser, T. Vogel, R. Eilhardt, C. Wenger, L. Molina-Luna, and L. Alff

Appl. Phys. Lett. 117, 013504 (2020)